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Compound Semiconductor Market by Type (III-V Compound Semiconductors, II-VI Compound Semiconductors, Sapphire, IV-IV Compound Semiconductors, and Others), Deposition Technology (Chemical Vapor Deposition (CVD), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), Ammonothermal, Liquid Phase Epitaxy (LPE), Atomic Layer Deposition (ALD), and Others), Product (Power Semiconductor, Transistors, Integrated Circuits (ICs), Diodes & Rectifiers, and Others), and Application (IT & Telecom, Industrial and Energy & Power, Aerospace & Defense, Automotive, Consumer Electronics, and Healthcare) - Global Opportunity Analysis and Industry Forecast, 2017-2023

Compound Semiconductor Market by Type (III-V Compound Semiconductors, II-VI Compound...

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Compound Semiconductor Market by Type (III-V Compound Semiconductors, II-VI Compound Semiconductors, Sapphire, IV-IV Compound Semiconductors, and Others), Deposition Technology (Chemical Vapor Deposition (CVD), Molecular Beam Epitaxy (MBE), Hydride Vapor Phase Epitaxy (HVPE), Ammonothermal, Liquid Phase Epitaxy (LPE), Atomic Layer Deposition (ALD), and Others), Product (Power Semiconductor, Transistors, Integrated Circuits (ICs), Diodes & Rectifiers, and Others), and Application (IT & Telecom, Industrial and Energy & Power, Aerospace & Defense, Automotive, Consumer Electronics, and Healthcare) - Global Opportunity Analysis and Industry Forecast, 2017-2023
Compound Semiconductor Market by Type...
Report Code
RO11/113/1078

Publish Date
01/Aug/2017

Pages
309
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The global compound semiconductor market was valued at $66,623 million in 2016, and is expected to reach $142,586 million by 2023, registering a CAGR of 11.3% from 2017 to 2023. Compound semiconductors, such as GaN and SiC, comprises two or more elements of the periodic table, and are synthesized using deposition technologies. The devices manufactured using semiconductors form essential components of most electronic circuits, , as they possess unique properties such as, wide bandgap, high operational temperatures, high current & voltage holding capacity, and ability to generate microwave signals.

The global compound semiconductor market is driven by widespread applications of gallium nitride electronics and rise in demand for different automotive electronics in the Asia-Pacific region. Moreover, increase in demand for optoelectronics devices & wireless communication technologies and rise in adoption of photovoltaics boost the market growth. In addition, evolution of compound semiconductor compliant technology & products in the Asia-Pacific region and increase in volume of data transactions drive the market growth. However, rise in compatibility issues related to high-end materials, such as silicon, restrains the market growth. Conversely, increase in use of GaN in smart grid as compared to traditional silicon semiconductors is expected to provide growth opportunities for the market.

The global compound semiconductor market is segmented on the basis of type, deposition technology, product, application, and geography. Based on type, it is categorized into III-V compound semiconductors, II-VI compound semiconductors, sapphire, IV-IV compound semiconductors, and others (aluminum gallium arsenide (ALGAAS), aluminum indium arsenide (ALINAS), aluminum gallium nitride (ALGAN), aluminum gallium phosphide (ALGAP), indium gallium nitride (INGAN), cadmium zinc telluride (CDZNTE), and mercury cadmium telluride (HGCDTE)). The III-V compound semiconductors segment is further divided into gallium nitride (GAN), gallium phosphide (GAP), gallium arsenide (GAAS), indium phosphide (INP), and indium antimonide (INSB).

The II-VI compound semiconductors segment is classified into cadmium selenide (CDSE), cadmium telluride (CDTE), and zinc selenide (ZNSE). The IV-IV compound semiconductors segment is bifurcated into silicon carbide (SIC) and silicon germanium (SIGE). Based on deposition technology, the market is divided into chemical vapor deposition (CVD), molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE), ammonothermal, liquid phase epitaxy (LPE), atomic layer deposition (ALD), and others. On the basis of product, it is categorized into power semiconductor, transistors, integrated circuits (ICs), diodes & rectifiers, and others. The transistors segment is further classified into high electron mobility transistors (HEMTs), metal oxide semiconductor field effect transistors (MOSFETs), and metal semiconductor field effect transistors (MESFETs). ICs are further bifurcated into monolithic microwave integrated circuits (MMICs) and radio frequency integrated circuits (RFICs). The diode & rectifiers segment is further divided into PIN diode, Zener diode, Schottky diode, and light emitting diode. The applications covered in this study include IT & telecom, industrial and energy & power, aerospace & defense, automotive, consumer electronics, and healthcare.

The IT & telecom segment is further categorized into signal amplifiers & switching systems, satellite communication applications, radar applications, and RF. The aerospace & defense segment is classified into combat vehicles, ships & vessels, and microwave radiation. The industrial and energy & power segment is further bifurcated into wind turbines and wind power systems. The consumer electronics segment is further divided into inverters in consumer applications, LED lighting in consumer applications, and switch mode consumer power supply systems. The automotive segment is further categorized into electric vehicles & hybrid electric vehicles, automotive braking systems, rail traction, and automobile motor drives. The healthcare segment is bifurcated into implantable medical devices and biomedical electronics.

Geographically, the market is analyzed across North America (U.S., Mexico, and Canada), Europe (UK, Germany, France, and rest of Europe), Asia-Pacific (China, Japan, India, Australia, and rest of Asia-Pacific), and LAMEA (Latin America, Middle East, and Africa).

The major companies profiled in the report include Cree Inc., International Quantum Epitaxy PLC., Freescale Semiconductor Inc., LM Ericsson Telefon AB, Taiwan Semiconductor Manufacturing Company Ltd., Renesas Electronics Corporation, Texas Instruments, Inc., STMicroelectronics NV, Infineon Technologies AG, and Toshiba Corporation.


KEY BENEFITS FOR STAKEHOLDERS

The report provides comprehensive analysis of the current trends and future estimations in the global compound semiconductor market.
The report offers the competitive scenario of the industry along with the growth trends, structure, drivers, scope, opportunities, and challenges.
The report includes a detailed analysis of the key segments to provide insights on the market dynamics.
Porter's five forces analysis highlights the potential of buyers & suppliers and the competitive structure of the market to devise effective growth strategies and facilitate better decision-making.
KEY MARKET SEGMENTS



By Type
III-V Compound Semiconductors
Gallium Nitride (GAN)
Gallium Phosphide (GAP)
Gallium Arsenide (GAAS)
Indium Phosphide (INP)
Indium Antimonide (INSB)
II-VI Compound Semiconductors
Cadmium Selenide (CDSE)
Cadmium Telluride (CDTE)
Zinc Selenide (ZNSE)
Sapphire
IV-IV Compound Semiconductors
Silicon Carbide (SIC)
Silicon Germanium (SIGE)
Others
Aluminum Gallium Arsenide (ALGAAS)
Aluminum Indium Arsenide (ALINAS)
Aluminum Gallium Nitride (ALGAN)
Aluminum Gallium Phosphide (ALGAP)
Indium Gallium Nitride (INGAN)
Cadmium Zinc Telluride (CDZNTE)
Mercury Cadmium Telluride (HGCDTE)
By Deposition Technology
Chemical Vapor Deposition (CVD)
Metal Organic Chemical Vapor Deposition (MOCVD)
Molecular Beam Epitaxy (MBE)
Metal Organic Molecular Beam Epitaxy (MOMBE)
Hydride Vapor Phase Epitaxy (HVPE)
Ammonothermal
Liquid Phase Epitaxy (LPE)
Atomic Layer Deposition (ALD)
Others
NA-FLUX LPE
By Product
Power Semiconductor
Transistors
High Electron Mobility Transistors (HEMTs)
Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)
Metal Semiconductor Field Effect Transistors (MESFETs)
Integrated Circuits (ICs)
Monolithic Microwave Integrated Circuits(MMICs)
Radio Frequency Integrated Circuits (RFICs)
Diodes & Rectifiers
PIN diode
Zener Diode
Schottky Diode
Light Emitting Diode
Others
By Application
ICT Sector
Signal Amplifiers & Switching Systems
Satellite Communication
Radar
RF
Aerospace & Defense
Combat Vehicles
Ships & Vessels
Microwave Radiation
Industrial and Energy & Power
Smart Grid
Wind Turbines & Wind Power Systems
Photovoltaic Inverters
Motor Drives
Consumer Electronics
Inverters in Consumer
LED Lighting in Consumer
Switch Mode Consumer Power Supply Systems
Automotive
Electric Vehicles & Hybrid Electric Vehicles
Automotive Braking Systems
Rail Traction
Automobile Motor Drives
Medical
Implantable Medical Devices
Biomedical Electronics
By Geography
North America
U.S.
Mexico
Canada
Europe
UK
Germany
France
Rest of Europe


Asia-Pacific
China
Japan
India
Australia
Rest of Asia-Pacific
LAMEA
Latin America
Middle East
Africa
Key Players

Cree Inc.
International Quantum Epitaxy Plc.
Freescale Semiconductor Inc.
LM Ericsson Telefon AB
Taiwan Semiconductor Manufacturing Company Ltd.
Renesas Electronics Corporation
Texas Instruments, Inc.
STMicroelectronics NV
Infineon Technologies AG
Toshiba Corporation
The other players in the value chain include (profiles not included in the report)

Mining & Chemical Products Ltd.
Umicore Indium Products
United Mineral & Chemical Corp

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