The global high electron mobility transistor market size was US$ 6.2 billion in 2021. The global high electron mobility transistor market size is estimated to reach US$ 8.9 billion by 2030, growing at a compound annual growth rate (CAGR) of 4.2% during the forecast period from 2022 to 2030.
A high electron mobility transistor (HEMT) is a field effect transistor that contains a link between two types with different band gaps as the medium rather than a doped region. The primary components of a HEMT device contain operation at higher frequencies thus increasing its applications in high-frequency tools such as mobile phones, voltage converters, satellite television receivers, and radar equipment.

Factors Influencing Market Growth

• Ample acquisitions and growth of HEMTs by key players are anticipated to drive the growth of the overall market.
• The lack of traditional techniques to produce and create HEMT devices is anticipated to hinder the overall market growth.
• The high need for new HEMT technologies in the aerospace and defense and automotive sector are anticipated to drive the overall market expansion.

Effect of the COVID-19 Pandemic

COVID-19 had a severe impact on the overall market expansion. It has created the major problem and economic trouble for all components of the value chain, such as businesses and consumers all around the world. A complete lockdown was imposed by the governmental bodies to stop the spread of the disease and this disrupted the production teams and the supply chains around the globe, particularly in the case of raw materials including sectors like automotive, electronics, and many more.

Regional Analysis

Asia-Pacific holds the top place in the global market, due to the organizations taking different initiatives to create power infrastructure with developed technologies. Organizations around verticals have learned the significance of HEMT transistor power instruments to ensure power management. A high need for automated switching devices and power modules is anticipated to drive the overall market expansion.

Leading Competitors
The prominent players in the global high electron mobility transistor market are:
• Renesas Electronics
• Intel Corporation
• Texas Instruments
• ST Microelectronics
• NXP SEMICONDUCTORS
• Wolfspeed
• Microsemi
• Mitsubish
• Qorvo
• Infineon
• Others
Segmentation Analysis
The global high electron mobility transistor market segmentation focuses on Type, End User, and Region.
Segmentation on the basis of Type
• Gallium Nitride (GaN)
• Silicon Carbide (SiC)
• Gallium Arsenide (GaAs)
• Others

Segmentation on the basis of End User
• Consumer Electronics
• Automotive
• Industrial
• Aerospace and Defense
• Others
Segmentation on the basis of Region
• North America
• The U.S.
• Canada
• Mexico
• Europe
• Western Europe
• The UK
• Germany
• France
• Italy
• Spain
• Rest of Western Europe
• Eastern Europe
• Poland
• Russia
• Rest of Eastern Europe
• Asia Pacific
• China
• India
• Japan
• Australia & New Zealand
• ASEAN
• Rest of Asia Pacific
• Middle East & Africa (MEA)
• UAE
• Saudi Arabia
• South Africa
• Rest of MEA
• South America
• Brazil
• Argentina
• Rest of South America