The global power MOSFET market was valued at $3,730 million in 2016, and is expected to reach $6,340 million in 2023, growing at a CAGR of 7.4% from 2017 to 2023. A power metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of metal-oxide semiconductor field-effect transistor designed to handle significant power levels with optimum power loss.

MOSFET is a type of insulated gate bipolar transistor with high switching speed and enhanced efficiency at low-voltage operations. It utilizes vertical structures with source and drain terminals at opposite sides of the chip. In addition, power MOSFETS are widely used in three modes: n-channel enhancement-mode, p-channel enhancement-mode, or n-channel depletion mode. Moreover, various technologies, such as vertical diffused MOS (VDMOS), double diffused MOS, trench MOS, UMOS, VMOS, and others, are used for the structuring of the MOSFET.

MOSFET has gained popularity among various applications such as electronic switches in power management, auto intensity controllers, invertors, generators, and others; power supplies such as DC to DC convertors; and low-voltage motor controllers to regulate the flow of current. The factors that drive the market growth are reduction in the on resistance (RON) of the power MOSFET structures and enhancement of breakdown voltage, which enhance the efficiency and durability of the power device. However, performance issues, such as current leakage at high-voltage operations, and power breakdown hamper the market growth. Furthermore, irrespective of these challenges, government initiatives to establish high-voltage direct current (HVDC) & smart grid, and increase in demand for consumer electronic are expected to provide several opportunities for the market in the near future.

The global power MOSFET market is segmented on the basis of type, power rate, application, and geography. The type segment is bifurcated into depletion mode power MOSFET and enhancement mode power MOSFET. The power rate segment is divided into high power, medium power, and low power. Based on application, the market is classified into energy & power, consumer electronics, inverter & UPS, industrial system, and others (medical devices & traction). By geography, it is analyzed across North America (U.S., Mexico, and Canada), Europe (UK, Germany, France, and rest of Europe), Asia-Pacific (China, India, Japan, Australia, and rest of Asia-Pacific), and LAMEA (Latin America, Middle East, and Africa).

The major companies profiled in the report include Infineon Technologies AG, Fairchild Semiconductors, Renesas Electronics Corporation, Digi-key Electronics, Toshiba Corp., IXYS Corporation, Power Integration, STMicroelectronics, NXP Semiconductors, and Texas Instruments.

KEY BENEFITS FOR STAKEHOLDERS

Comprehensive analysis of the current trends and future estimations of the global power MOSFET market is provided.
The report provides a competitive scenario of the market and growth trends, structure, driving factors, scope, opportunities, and challenges.
The report includes a detailed analysis of the key segments to provide insights on the market dynamics.
Porter's Five Forces analysis highlights the potential of buyers and suppliers and provides insights on the competitive structure of the market to devise effective growth strategies and facilitate better decision-making.
KEY MARKET SEGMENTS

BY TYPE

Depletion Mode Power MOSFET
Enhancement Mode Power MOSFET
BY POWER RATE

High Power
Medium Power
Low Power
BY APPLICATION

Energy & Power
Consumer Electronics
Inverter & UPS
Industrial System
Others (Medical Devices & Traction)
BY GEOGRAPHY

North America
U.S.
Mexico
Canada
Europe
UK
Germany
France
Rest of Europe
Asia-Pacific
China
Japan
India
South Korea
Rest of Asia-Pacific
LAMEA
Latin America
Middle East
Africa
KEY PLAYERS

Infineon Technologies AG
Fairchild Semiconductor
Renesas Electronics Corporation
Digi-Key Electronics
Toshiba Corporation
IXYS Corporation
Power Integration
STMicroelectronics
NXP Semiconductors
Texas Instruments
The other players in the value chain include (profiles not included in the report):

FUJI Electric Co, LTD.
Microsemi Corporation
Semikron International GmbH
ABB Ltd.