Insulated-Gate Bipolar Transistor (IGBT) is a three-terminal electronic switching device, which is a combination of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and Bipolar Junction Transistor (BJT) in monolithic form. It allows the flow of power only when the gate terminal is connected to the positive supply of the source. Moreover, it is a minority-carrier device with several benefits such as large bipolar current-carrying capability and high input impedance. IGBT aims to deliver faster switching rate and higher efficiency to enable proper operations at high voltage or high current. In addition, it can be used for dynamic breaking, where the power is dissipated by resistors that are connected in parallel or in series. It is widely used in high power rating applications, which include electric vehicle motor drives, inductive heating cookers, and appliance motor drives.
IGBT is widely used in various applications such as renewable energy, High Voltage Direct Current (HVDC), motor drive, and consumer electronics, owing to its faster switching rate, high efficiency, and improved durability. Moreover, it supports high input impedance and improved parallel current sharing; thereby, fueling the market growth. However, performance issues, such as current leakage and breakdown, hamper the market growth. Proactive government initiatives to establish HVDCs & smart grids and increase in demand for consumer electronic are expected to provide lucrative opportunities to market players in the near future.
The world IGBT market is segmented on the basis of type, power rating, application, and geography. The type segment is bifurcated into discrete IGBT and IGBT modules. The power rating segment includes high power, medium power, and low power IGBTs. Based on application, the market is segment into energy & power, consumer electronics, inverter & UPS, electrical vehicle, industrial system, and others. Based on geography, the market is analyzed into North America (U.S., Mexico, and Canada), Europe (UK, Germany, France, and rest of Europe), Asia-Pacific (China, India, Japan, South Korea, and rest of Asia-Pacific), and LAMEA (Latin America, Middle East, and Africa).
The major companies profiled in the report include ABB Group, STMicroelectronics N.V., Toshiba Corporation, IXYS Corporation, Renesas Electronics Corp, Semikron International GmbH, Mitsubishi Electric Corp., Infineon Technologies AG, Fuji Electric Co. Ltd., and NXP Semiconductors N.V.
POTENTIAL BENEFITS FOR STAKEHOLDERS
Comprehensive analysis of the current trends and future estimations in the world IGBT market is provided in the report
The report provides a competitive scenario of the market with growth trends, structure, driving factors, scope, opportunities, and challenges
The report includes a detailed analysis of the key segments to provide insights on the market dynamics
Porter's Five Forces analysis highlights the potential of buyers and suppliers as well as provides insights on the competitive structure of the market to devise effective growth strategies and facilitate better decision-making
Value chain analysis provides key inputs on the role of stakeholders involved at various stages
MARKET SEGMENTATION
The world IGBT market is segmented on the basis of type, power rating, application, and geography.
BY TYPE
Discrete IGBT
IGBT Module
BY POWER RATING
High Power
Medium Power
Low Power
BY APPLICATION
Energy & Power
Consumer Electronics
Inverter & UPS
Electric Vehicle
Industrial System
Others (Medical Devices & Traction)
BY GEOGRAPHY
North America
U.S.
Mexico
Canada
Europe
UK
Germany
France
Rest of Europe
Asia-Pacific
India
China
Japan
South Korea
Rest of Asia-Pacific
LAMEA
Latin America
Middle East
Africa
KEY PLAYERS
ABB Group
STMicroelectronics N.V.
Toshiba Corporation
IXYS Corporation
Renesas Electronics Corp.
Semikron International GmbH
Mitsubishi Electric Corp.,
Infineon Technologies AG
Fuji Electric Co. Ltd.
NXP Semiconductors N.V.
