According to this latest study, the 2021 growth of SiC Schottky Barrier Diodes (SiC SBD) will have significant change from previous year. By the most conservative estimates of global SiC Schottky Barrier Diodes (SiC SBD) market size (most likely outcome) will be a year-over-year revenue growth rate of XX% in 2021, from US$ xx million in 2020. Over the next five years the SiC Schottky Barrier Diodes (SiC SBD) market will register a xx% CAGR in terms of revenue, the global market size will reach US$ xx million by 2026.

This report presents a comprehensive overview, market shares, and growth opportunities of SiC Schottky Barrier Diodes (SiC SBD) market by product type, application, key manufacturers and key regions and countries.

Segmentation by type: breakdown data from 2016 to 2021, in Section 2.3; and forecast to 2026 in section 11.7.
600V
650V
1200V

Segmentation by application: breakdown data from 2016 to 2021, in Section 2.4; and forecast to 2026 in section 11.8.
Aviation
Industrial
Automotive Industry
Energy Industry
Medical
Others

This report also splits the market by region: Breakdown data in Chapter 4, 5, 6, 7 and 8.
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The report also presents the market competition landscape and a corresponding detailed analysis of the major vendor/manufacturers in the market. The key manufacturers covered in this report: Breakdown data in Chapter 3.
Fuji Electric
ROHM
Toshiba
Microchip Technology
STMicroelectronics
Mitsubishi Electric
MCC SEMI
Renesas
Littelfuse
SemiSouth Laboratories
Yangzhou Yangjie Electronic
CETC Guoji South Group
Cengol
Chinasicpower
BASiC Semiconductor
Zhuzhou CRRC Times Electric