GaN material has a critical field that is 10 times higher than silicon. With the same voltage ratings, a much lower on state resistance can be achieved.
The global GaN power device market for RF power device held the largest share in 2016. In 2016, more than 90% of the total GaN power device market for RF power devices was dominated by the telecommunications; military, defense, and aerospace; and consumer and enterprise verticals. RF power devices are used in the military applications, very small aperture terminal (VSAT), phased-array radar applications, defense applications, RF cellular infrastructure, jammers, and satellite communications. Initially developed for improvised explosive device (IED) jammers in Iraq, GaN RF power has emerged as the technology of choice for all new microwave and millimeter-wave electronics including radar, satellite, communications, and electronic warfare.
The market for GaN-based power drives is expected to grow significantly during the forecast period. This is attributed to its characteristics such as high breakdown voltage and low conduction resistance characteristics that enable high-speed switching and miniaturization. The growing EV charging and electric vehicle production markets, as well as increasing renewable energy generation are the main reasons for the high growth rate of GaN-based power devices. Moreover, there is a huge demand for motor drives due to the high efficiency and performance characteristics offered by GaN devices in high voltage range (above 400 V) applications. GaN power devices are mainly used in UPS and motor control, wireless charging, high-efficiency power supply applications, servo motor drive, and hybrid and EV battery control and health management systems.

According to this study, over the next five years the GaN Power Devices market will register a xx% CAGR in terms of revenue, the global market size will reach USD xx million by 2024, from USD xx million in 2019. In particular, this report presents the global market share (sales and revenue) of key companies in GaN Power Devices business, shared in Chapter 3.

This report presents a comprehensive overview, market shares, and growth opportunities of GaN Power Devices market by product type, application, key manufacturers and key regions and countries.

This study considers the GaN Power Devices value and volume generated from the sales of the following segments-

Segmentation by product type- breakdown data from 2014 to 2019, in Section 2.3; and forecast to 2024 in section 11.7.
600V
Other
Segmentation by application- breakdown data from 2014 to 2019, in Section 2.4; and forecast to 2024 in section 11.8.
Server and Other IT Equipments
High-efficiency and Stable Power Supplies
Rapidly Expanding HEV/EV Devices

This report also splits the market by region- Breakdown data in Chapter 4, 5, 6, 7 and 8.
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Spain
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The report also presents the market competition landscape and a corresponding detailed analysis of the major vendor/manufacturers in the market. The key manufacturers covered in this report- Breakdown data in in Chapter 3.
Fujitsu
Toshiba
Koninklijke Philips
Texas Instruments
EPIGAN
NTT Advanced Technology
RF Micro Devices
Cree Incorporated
Aixtron
International Quantum Epitaxy (IQE)
Mitsubishi Chemical
AZZURO Semiconductors

In addition, this report discusses the key drivers influencing market growth, opportunities, the challenges and the risks faced by key manufacturers and the market as a whole. It also analyzes key emerging trends and their impact on present and future development.

Research objectives
To study and analyze the global GaN Power Devices consumption (value & volume) by key regions/countries, product type and application, history data from 2014 to 2018, and forecast to 2024.
To understand the structure of GaN Power Devices market by identifying its various subsegments.
Focuses on the key global GaN Power Devices manufacturers, to define, describe and analyze the sales volume, value, market share, market competition landscape, SWOT analysis and development plans in next few years.
To analyze the GaN Power Devices with respect to individual growth trends, future prospects, and their contribution to the total market.
To share detailed information about the key factors influencing the growth of the market (growth potential, opportunities, drivers, industry-specific challenges and risks).
To project the consumption of GaN Power Devices submarkets, with respect to key regions (along with their respective key countries).
To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market.
To strategically profile the key players and comprehensively analyze their growth strategies.