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2020-2025 Global Silicon Carbide (SiC) Power Devices Market Report - Production and Consumption Professional Analysis (Impact of COVID-19)

2020-2025 Global Silicon Carbide (SiC) Power Devices Market Report -...

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2020-2025 Global Silicon Carbide (SiC) Power Devices Market Report - Production and Consumption Professional Analysis (Impact of COVID-19)
2020-2025 Global Silicon Carbide (SiC)...
Report Code
RO11/125/12480

Publish Date
18/Mar/2021

Pages
118
PRICE
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A power device is a semiconductor, which is used as a switch or a rectifier in the power electronic system. SiC is a compound semiconductor comprised of silicon and carbon and has 10 times the dielectric breakdown field strength, bandgap, and thermal conductivity than silicon. The special characteristics of SiC power devices include high-temperature operation stability, high thermal conductivity, high-energy bandgap, and faster switching time.
This report elaborates the market size, market characteristics, and market growth of the Silicon Carbide (SiC) Power Devices industry, and breaks down according to the type, application, and consumption area of Silicon Carbide (SiC) Power Devices. The report also conducted a PESTEL analysis of the industry to study the main influencing factors and entry barriers of the industry.

In Chapter 3.4 of the report, the impact of the COVID-19 outbreak on the industry was fully assessed. Fully risk assessment and industry recommendations were made for Silicon Carbide (SiC) Power Devices in a special period. This chapter also compares the markets of Pre COVID-19 and Post COVID-19.
In addition, chapters 8-12 consider the impact of COVID-19 on the regional economy.

Key players in the global Silicon Carbide (SiC) Power Devices market covered in Chapter 13:
Mitsubishi Electric
ON Semiconductor
GeneSiC
Infineon Technologies
STMicroelectronics
Cree
ROHM Semiconductor
TOSHIBA
Renesas Electronics Corporation

In Chapter 6, on the basis of types, the Silicon Carbide (SiC) Power Devices market from 2015 to 2025 is primarily split into:
Power diode
Thyristor
Power MOSFET
IGBT

In Chapter 7, on the basis of applications, the Silicon Carbide (SiC) Power Devices market from 2015 to 2025 covers:
Industrial
Medical
Mil-aerospace
Aviation
Communication

Geographically, the detailed analysis of production, trade of the following countries is covered in Chapter 4.2, 5:
United States
Europe
China
Japan
India

Geographically, the detailed analysis of consumption, revenue, market share and growth rate of the following regions are covered in Chapter 8, 9, 10, 11, 12:
North America (Covered in Chapter 8)
United States
Canada
Mexico
Europe (Covered in Chapter 9)
Germany
UK
France
Italy
Spain
Others
Asia-Pacific (Covered in Chapter 10)
China
Japan
India
South Korea
Southeast Asia
Others
Middle East and Africa (Covered in Chapter 11)
Saudi Arabia
UAE
South Africa
Others
South America (Covered in Chapter 12)
Brazil
Others

Years considered for this report:
Historical Years: 2015-2019
Base Year: 2019
Estimated Year: 2020
Forecast Period: 2020-2025

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